Directly deposited nanocrystalline silicon thin-film transistors with ultra high mobilities
Directly deposited nanocrystalline silicon thin-film transistors with ultra high mobilities
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DOI：
10.1063/1.2408630
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发表时间：
2006-12
影响因子：
4
通讯作者：
Czang-Ho Lee;A. Sazonov;A. Nathan;J. Robertson
中科院分区：
文献类型：
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作者：
Czang-Ho Lee;A. Sazonov;A. Nathan;J. Robertson
作者报道了在150°C下通过射频等离子体增强化学气相沉积直接沉积的纳米晶硅薄膜晶体管。在室温下，晶体管的最大有效场效应迁移率为450 cm 2的电子和100 cm 2的空穴scinVs。作者认为，他们的结果的关键因素是氧含量的减少，它作为一个偶然的供体。
The authors report ultrahigh mobility nanocrystalline silicon thin-film transistors directly deposited by radio-frequency plasma enhanced chemical vapor deposition at 150°C. The transistors show maximum effective field effect mobilities of 450cm2∕Vs for electrons and 100cm2∕Vs for holes at room temperature. The authors argue that the key factor in their results is the reduction of the oxygen content, which acts as an accidental donor.