Graphene Transistors Are Insensitive to pH Changes in Solution
Graphene Transistors Are Insensitive to pH Changes in Solution
复制标题
DOI：
10.1021/nl201332c
复制
发表时间：
2011-09-01
期刊：
影响因子：
10.8
通讯作者：
Schoenenberger, Christian
中科院分区：
文献类型：
--
作者：
Fu, Wangyang;Nef, Cornelia;Schoenenberger, Christian
我们观察到非常小的栅极电压的变化时，所制备的石墨烯场效应晶体管（GFET）的传输特性的缓冲液的pH值发生变化。这一观察结果与Si基离子敏感FET形成强烈对比。如果石墨烯表面覆盖有疏水性氟苯层，则可以进一步降低GFET的低栅极偏移。如果改为应用薄的Al氧化物层，则相反。这表明干净的石墨烯不会感知质子的化学势。因此，GFET可以用作含水电解质中的参比电极。我们的发现揭示了各种各样的pH值引起的栅极移位，已公布的GFET在最近的文献。
We observe very small gate-voltage shifts in the transfer characteristic of as-prepared graphene field-effect transistors (GFETs) when the pH of the buffer is changed. This observation is in strong contrast to Si-based ion-sensitive FETs. The low gate-shift of a GFET can be further reduced if the graphene surface is covered with a hydrophobic fluorobenzene layer. If a thin Al-oxide layer is applied instead, the opposite happens. This suggests that clean graphene does not sense the chemical potential of protons. A GFET can therefore be used as a reference electrode in an aqueous electrolyte. Our finding sheds light on the large variety of pH-induced gate shifts that have been published for GFETs in the recent literature.