Growth and characterization of AlxGa1−xN lateral polarity structures
Growth and characterization of AlxGa1−xN lateral polarity structures
复制标题
DOI：
10.1002/pssa.201431740
复制
发表时间：
2015-05
期刊：
影响因子：
--
通讯作者：
M. Hoffmann;R. Kirste;S. Mita;W. Guo;J. Tweedie;M. Bobea;I. Bryan;Z. Bryan;M. Gerhold;R. Collazo;Z. Sitar
中科院分区：
文献类型：
--
作者：
M. Hoffmann;R. Kirste;S. Mita;W. Guo;J. Tweedie;M. Bobea;I. Bryan;Z. Bryan;M. Gerhold;R. Collazo;Z. Sitar
采用金属有机化学气相沉积法在含有微米尺寸畴的AlGaN横向极性结构（LPS）模板上制备了具有不同Al组分的LPS。III-金属和N-极性AlGaN域已分别生长在LT-AlN和c-蓝宝石域上。通过SEM和AFM的LPS表征揭示了当Al组成已经改变时的两个主要影响：（a）高Al含量导致N极性域内的柱状生长和（B）对于朝向III极性的低Al组成，可以观察到极性域之间的高度差。III极性域的表面质量不受Al组成的影响。对于较低的Al组成，N极性域的表面粗糙度降低。极性域的高周期性和域之间的边界的高质量表明AlGaN LPS被用作准相位匹配的横向波导的高潜力。
AlGaN lateral polarity structures (LPS) with varying Al composition, have been fabricated by metalorganic chemical vapour deposition on LPS templates containing µm size domains. III‐metal and N‐polar AlGaN domains have been grown on LT‐AlN and c‐sapphire domains, respectively. LPS characterization by SEM and AFM reveals two major effects when the Al composition has been varied: (a) A high Al content leads to columnar growth within N‐polar domains and (b) a height difference between the polar domains can be observed for low Al compositions towards III‐polarity. The surface quality of the III‐polar domains is not effected by the Al composition. The surface roughness of N‐polar domains decreases for lower Al compositions. The high periodicity of the polar domains and the high quality of the boundary between domains suggest a high potential of AlGaN LPS to be used as lateral wave guides for quasi phase matching.