Epitaxial growth of Heusler alloy Co2MnSi/MgO heterostructures on Ge(001) substrates
Epitaxial growth of Heusler alloy Co2MnSi/MgO heterostructures on Ge(001) substrates
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DOI：
10.1063/1.3605675
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发表时间：
2011-06
影响因子：
4
通讯作者：
Gui-fang Li;T. Taira;K. Matsuda;M. Arita;T. Uemura;Masafumi Yamamoto
中科院分区：
文献类型：
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作者：
Gui-fang Li;T. Taira;K. Matsuda;M. Arita;T. Uemura;Masafumi Yamamoto
我们通过磁控溅射Co2MnSi和电子束蒸发MgO在单晶Ge（001）衬底上制备了Heusler合金Co2MnSi/MgO异质结构，作为下一代自旋基功能器件的有希望的候选材料。结构研究表明，Co2MnSi/MgO异质结构在Ge（001）衬底上外延生长，具有非常光滑和突然的界面，Co2MnSi薄膜呈现L21结构。饱和磁化强度（μs）达到5.1µB/f.u。，接近于理论预测的μs 5.0µB/f.u。为半金属Co2MnSi，制备的Co2MnSi薄膜得到。
We prepared Heusler alloy Co2MnSi/MgO heterostructures on single-crystal Ge(001) substrates through magnetron sputtering for Co2MnSi and electron beam evaporation for MgO as a promising candidate for future generation spin-based functional devices. Structural investigations showed that the Co2MnSi/MgO heterostructure was grown epitaxially on a Ge(001) substrate with extremely smooth and abrupt interfaces and showed the L21 structure for the Co2MnSi film. Furthermore, a sufficiently high saturation magnetization (μs) value of 5.1 µB/f.u. at 10 K, which is close to the theoretically predicted μs of 5.0 µB/f.u. for half-metallic Co2MnSi, was obtained for prepared Co2MnSi films.