ENERGETIC ION BOMBARDMENT OF SIO2 SURFACES : MOLECULAR DYNAMICS SIMULATIONS
ENERGETIC ION BOMBARDMENT OF SIO2 SURFACES : MOLECULAR DYNAMICS SIMULATIONS
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SiO2 表面的高能离子轰击:分子动力学模拟
DOI:
10.1116/1.581452
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发表时间:
1998
期刊:
影响因子:
--
通讯作者:
D. Graves
中科院分区:
文献类型:
--
作者:
C. Abrams;D. Graves
Numerous profile evolution simulation studies strongly suggest that ions reflecting with glancing angles from etched feature sidewalls are responsible for microtrench formation at the feature bottom. Within these studies such reflections are traditionally assumed specular, where the ion retains all of its incident energy. In this study, we gauge the validity of that assumption by describing the distributions of reflected ion energies, Er, reflected ion angles (polar, θr; azimuthal, φr; and total scatter, αr), obtained via MD simulations of Ar+ bombardment of model SiO2 surfaces. We modeled the physics of the surface atom interactions using an empirical interatomic potential energy function developed by Feuston and Garofalini [J. Chem Phys. 89, 5818 (1988)]. We considered Ar+ ion energies, Ei, of 100 and 200 eV, and incident polar angles, θi, of 0°, 30°, 45°, 60°, 75°, and 85°, measured from the macroscopic surface normal. Each (Ei,θi) combination was used to generate a unique roughened model oxide surface...