ENERGETIC ION BOMBARDMENT OF SIO2 SURFACES : MOLECULAR DYNAMICS SIMULATIONS

ENERGETIC ION BOMBARDMENT OF SIO2 SURFACES : MOLECULAR DYNAMICS SIMULATIONS
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SiO2 表面的高能离子轰击:分子动力学模拟

DOI:
10.1116/1.581452
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发表时间:
1998
期刊:
Journal of Vacuum Science and Technology
影响因子:
--
通讯作者:
D. Graves
D. Graves
中科院分区:
--
文献类型:
--
作者:
C. Abrams;D. Graves

文献摘要

被引文献

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大量的剖面演化模拟研究强烈表明,从蚀刻特征侧壁反射的掠射角离子是特征底部形成微沟槽的原因。在这些研究中,这种反射通常被认为是镜面反射,在这种情况下,离子保留了所有入射能量。在本研究中,我们通过描述通过Ar+轰击模型SiO2表面的MD模拟获得的反射离子能量Er、反射离子角(极性θr、方位角φr和总散射αr)的分布来衡量该假设的有效性。我们使用Feuston和Garofalini开发的经验原子间势能函数来模拟表面原子相互作用的物理特性[J]。物理学报,1999,18(4):357 - 357。我们考虑了Ar+离子能量Ei为100和200 eV,入射极角θi为0°,30°,45°,60°,75°和85°,从宏观表面法线测量。每个(Ei,θi)组合被用来生成一个独特的粗糙模型氧化物表面…
Numerous profile evolution simulation studies strongly suggest that ions reflecting with glancing angles from etched feature sidewalls are responsible for microtrench formation at the feature bottom. Within these studies such reflections are traditionally assumed specular, where the ion retains all of its incident energy. In this study, we gauge the validity of that assumption by describing the distributions of reflected ion energies, Er, reflected ion angles (polar, θr; azimuthal, φr; and total scatter, αr), obtained via MD simulations of Ar+ bombardment of model SiO2 surfaces. We modeled the physics of the surface atom interactions using an empirical interatomic potential energy function developed by Feuston and Garofalini [J. Chem Phys. 89, 5818 (1988)]. We considered Ar+ ion energies, Ei, of 100 and 200 eV, and incident polar angles, θi, of 0°, 30°, 45°, 60°, 75°, and 85°, measured from the macroscopic surface normal. Each (Ei,θi) combination was used to generate a unique roughened model oxide surface...