Defect Loss: A New Concept for Reliability of MOSFETs
Defect Loss: A New Concept for Reliability of MOSFETs
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DOI：
10.1109/led.2012.2185033
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发表时间：
2012-04-01
影响因子：
4.9
通讯作者：
Groeseneken, G.
中科院分区：
文献类型：
--
作者：
Duan, M.;Zhang, J. F.;Groeseneken, G.
缺陷的产生限制了器件的寿命并增强了其可变性。以前的工作主要研究了生成动力学和过程。目前的理解是，导致缺陷的微观结构既可以作为前体存在，也可以作为带电缺陷存在。先驱体在应力过程中转化为缺陷，但缺陷可以通过恢复和/或退火返回到其先驱体状态。这封信将引入一个新的概念：瑕疵损失。丢失的缺陷将不会返回到前体状态。当再次受到压力时，丢失的缺陷将不会再次出现。研究发现，缺陷损耗是热激活的，“永久分量”的减少对损耗有很大的贡献。这封信为通过最大限度地增加缺陷损耗来提高器件寿命开辟了道路。
Defect generation limits device lifetime and enhances its variability. Previous works mainly addressed the generation kinetics and process. The current understanding is that the microstructure responsible for defect can exist either as a precursor or as a charged defect. A precursor is converted into a defect during stresses, but a defect can return to its precursor status through recovery and/or anneal. This letter will introduce a new concept: defect loss. A lost defect will not return to the precursor status. When stressed again, the lost defect will not reappear. It is found that the defect loss is thermally activated and a reduction of the "permanent component" makes substantial contribution to the loss. This letter opens the way for improving device lifetime through maximizing defect loss.