Current-driven phase oscillation and domain-wall propagation in WxV1-xO2 nanobeams
Current-driven phase oscillation and domain-wall propagation in WxV1-xO2 nanobeams
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DOI：
10.1021/nl0624768
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发表时间：
2007-02-01
期刊：
影响因子：
10.8
通讯作者：
Park, Hongkun
中科院分区：
文献类型：
--
作者：
Gu, Qian;Falk, Abram;Park, Hongkun
我们报告的观察电流驱动的金属（M）-绝缘体（I）相振荡的两端器件，将个别WxV 1-xO 2纳米梁连接到并联并联电容器。对于1 μ m左右的器件，相位振荡频率可达5 MHz以上。M-I相振荡与电容器的充电/放电一致，通过焦耳加热和珀耳帖效应驱动的单个M-I畴壁的轴向漂移而发生。
We report the observation of a current-driven metal (M)-insulator (I) phase oscillation in two-terminal devices incorporating individual WxV1-xO2 nanobeams connected to parallel shunt capacitors. The frequency of the phase oscillation reaches above 5 MHz for similar to 1 mu m long devices. The M-I phase oscillation, which coincides with the charging/discharging of the capacitor, occurs through the axial drift of a single M-I domain wall driven by Joule heating and the Peltier effect.