Optically Implemented Broadband Blueshift Switch in the Terahertz Regime
Optically Implemented Broadband Blueshift Switch in the Terahertz Regime
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DOI：
10.1103/physrevlett.106.037403
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发表时间：
2011-01-18
影响因子：
8.6
通讯作者：
Soukoulis, Costas M.
中科院分区：
文献类型：
--
作者：
Shen, Nian-Hai;Massaouti, Maria;Soukoulis, Costas M.
我们首次在实验上演示了一种在太赫兹(THz)范围内光学实现的蓝移可调超材料。该设计包含两个潜在的谐振态，而位于临界区的光导半导体(硅)起到了将谐振器从模式1切换到模式2的中介作用。通过对硅的光学控制，制作的器件的调谐范围高达26%(从0.76 THz到0.96 THz)。宽带蓝移可调超材料的实现为实现红移和蓝移同时可调的可切换超材料和级联可调器件提供了机会。我们的实验方法与半导体技术兼容，并可用于太赫兹系统的其他应用。
We experimentally demonstrate, for the first time, an optically implemented blueshift tunable metamaterial in the terahertz (THz) regime. The design implies two potential resonance states, and the photoconductive semiconductor (silicon) settled in the critical region plays the role of intermediary for switching the resonator from mode 1 to mode 2. The observed tuning range of the fabricated device is as high as 26% (from 0.76 THz to 0.96 THz) through optical control to silicon. The realization of broadband blueshift tunable metamaterial offers opportunities for achieving switchable metamaterials with simultaneous redshift and blueshift tunability and cascade tunable devices. Our experimental approach is compatible with semiconductor technologies and can be used for other applications in the THz regime.