High Temperature X-Ray Diffraction Study of Melt Structure of Silicon
High Temperature X-Ray Diffraction Study of Melt Structure of Silicon
复制标题
硅熔体结构的高温X射线衍射研究
DOI：
10.1143/jjap.34.4124
复制
发表时间：
1995
影响因子：
1.5
通讯作者：
J. M. Toguri
中科院分区：
文献类型：
--
作者：
Y. Waseda;K. Shinoda;K. Sugiyama;S. Takeda;K. Terashima;J. M. Toguri
在1440、1460和1520℃三个温度下，用x射线衍射测定了熔融硅的结构。所有的结构因素都表明，在第一峰的高波矢量侧有一个特征性的小驼峰，随着温度的升高，这种特征变得稍微模糊。在对分布函数中，在第一主峰（0.245 nm）和第二主峰（0.55 nm）之间有一个小峰，在0.35 nm处有一个浅的最小值。这在通常熔融金属的对分布函数中是观察不到的。应用干涉函数细化技术对近邻域的配位数进行了估计，结果表明，前两个邻域在1440°C时的配位数为6.3(4.6+1.7)，1460°C时的配位数为5.7(4.5+1.2)，1520°C时的配位数为5.8（4.4+1.4）。
The structure of molten silicon has been determined at three temperatures of 1440, 1460 and 1520° C by X-ray diffraction. All structure factors indicate a characteristic small hump on the higher wave vector side of the first peak and such specific feature becomes slightly obscure as the temperature increases. A small peak is found in the region between the first (0.245 nm) and second (0.55 nm) main peaks in the pair distribution functions with a shallow minimum at about 0.35 nm. This is not observed in the pair distribution functions for usual molten metals. The coordination numbers in the near-neighbor region have been estimated by applying the interference function refining technique and the results for the first two neighbors are 6.3 (4.6+1.7) at 1440° C, 5.7 (4.5+1.2) at 1460° C and 5.8 (4.4+1.4) at 1520° C. The present structural information is consistent with the recent results of density and electrical resistivity of molten silicon.