Current-driven magnetic domain-wall logic
Current-driven magnetic domain-wall logic
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DOI：
10.1038/s41586-020-2061-y
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发表时间：
2020-03-01
期刊：
影响因子：
64.8
通讯作者：
Heyderman, Laura J.
中科院分区：
文献类型：
--
作者：
Luo, Zhaochu;Hrabec, Ales;Heyderman, Laura J.
基于自旋的逻辑架构提供非易失性数据保留、接近零泄漏和可扩展性，扩展了技术路线图，超越了互补的金属氧化物半导体逻辑（1-13）。基于磁畴壁的结构利用磁畴壁的快速运动、高密度、非挥发性和灵活设计来处理和存储信息（1,3,14-16）。然而，这种方案依赖于使用外部磁场的畴壁操纵和时钟，这限制了它们在密集、大规模芯片中的实现。在这里，我们展示了一种使用域壁赛道执行全电动逻辑运算和级联的方法。我们利用由界面Dzyaloshinskii-Moriya相互作用引起的相邻磁畴之间的手性耦合（17-20），促进了非共线自旋对准，实现了一个畴壁逆变器，这是所有布尔逻辑实现中必不可少的基本构建块。然后，我们制造可重构的NAND和NOR逻辑门，并在电流诱导的畴壁运动下执行操作。最后，我们级联几个NAND门来构建异或和全加法门，演示了磁数据的电气控制和逻辑电路中的器件互连。我们的工作为可扩展的全电磁逻辑提供了一个可行的平台，为逻辑存储应用铺平了道路。
Spin-based logic architectures provide nonvolatile data retention, near-zero leakage, and scalability, extending the technology roadmap beyond complementary metal-oxide-semiconductor logic(1-13). Architectures based on magnetic domain walls take advantage of the fast motion, high density, non-volatility and flexible design of domain walls to process and store information(1,3,14-16). Such schemes, however, rely on domain-wall manipulation and clocking using an external magnetic field, which limits their implementation in dense, large-scale chips. Here we demonstrate a method for performing all-electric logic operations and cascading using domain-wall racetracks. We exploit the chiral coupling between neighbouring magnetic domains induced by the interfacial Dzyaloshinskii-Moriya interaction(17-20), which promotes non-collinear spin alignment, to realize a domain-wall inverter, the essential basic building block in all implementations of Boolean logic. We then fabricate reconfigurable NAND and NOR logic gates, and perform operations with current-induced domain-wall motion. Finally, we cascade several NAND gates to build XOR and full adder gates, demonstrating electrical control of magnetic data and device interconnection in logic circuits. Our work provides a viable platform for scalable all-electric magnetic logic, paving the way for memory-in-logic applications.