TCR Signaling in T Cell Memory.
TCR Signaling in T Cell Memory.
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DOI：
10.3389/fimmu.2015.00617
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发表时间：
2015
影响因子：
7.3
通讯作者：
Teixeiro E
中科院分区：
文献类型：
--
作者：
Daniels MA;Teixeiro E
T 细胞记忆在我们抵御病原体和肿瘤方面发挥着至关重要的作用。抗原及其与 T 细胞受体 (TCR) 的相互作用是塑造 T 细胞记忆以及炎症和共刺激的起始元件之一。在过去的十年中，已经确定了一些支持记忆编程的转录因子和信号通路。然而，TCR 信号如何调节它们仍知之甚少。最近的研究表明，控制 T 细胞记忆的生化规则会根据 TCR 信号强度而发生显着变化。此外，TCR 信号强度调节细胞因子信号传导的输入，包括促炎细胞因子。这些强调了定制抗原信号如何改善免疫治疗。在这篇综述中，我们重点关注 TCR 信号如何调节 T 细胞记忆，以及 TCR-肽-MHC 相互作用的数量和质量如何影响 T 细胞在记忆池中采用的多种命运。
T cell memory plays a critical role in our protection against pathogens and tumors. The antigen and its interaction with the T cell receptor (TCR) is one of the initiating elements that shape T cell memory together with inflammation and costimulation. Over the last decade, several transcription factors and signaling pathways that support memory programing have been identified. However, how TCR signals regulate them is still poorly understood. Recent studies have shown that the biochemical rules that govern T cell memory, strikingly, change depending on the TCR signal strength. Furthermore, TCR signal strength regulates the input of cytokine signaling, including pro-inflammatory cytokines. These highlight how tailoring antigenic signals can improve immune therapeutics. In this review, we focus on how TCR signaling regulates T cell memory and how the quantity and quality of TCR–peptide–MHC interactions impact the multiple fates a T cell can adopt in the memory pool.