Dry Development of Resists Exposed to Focused Gallium Ion Beam
Dry Development of Resists Exposed to Focused Gallium Ion Beam
复制标题
暴露于聚焦镓离子束的抗蚀剂的干法显影
DOI：
10.1143/jjap.19.l615
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发表时间：
1980
影响因子：
1.5
通讯作者：
S. Yamazaki
中科院分区：
文献类型：
--
作者：
H. Kuwano;K. Yoshida;S. Yamazaki
本报告提出了一种新的光刻方法，采用聚焦离子束曝光和随后的干显影。结果表明，抗蚀剂暴露于镓离子的等离子体刻蚀速率远低于未暴露的抗蚀剂。将这种特性应用于光刻胶，可以成功地获得精细图案。该方法适用于PMMA、CMS、PGMA、FBM等多种抗蚀剂的干法显影。
This report proposes a new lithography method employing focused ion beam exposure and subsequent dry development. It is shown that the plasma etching rate of resists exposed to gallium ions is much lower than that of resists not exposed. As this characteristic is applied to resist lithography, fine patterns can be obtained successfully. This dry development is applicable to many kinds of resist, such as PMMA, CMS, PGMA, FBM etc.