Controllable layer‐by‐layer etching of III–V compound semiconductors with an electron cyclotron resonance source
Controllable layer‐by‐layer etching of III–V compound semiconductors with an electron cyclotron resonance source
复制标题
利用电子回旋共振源对 III-V 族化合物半导体进行可控逐层刻蚀
DOI：
10.1116/1.586889
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发表时间：
1993
影响因子：
1.4
通讯作者：
S. Pang
中科院分区：
文献类型：
--
作者：
K. K. Ko;S. Pang
利用电子回旋共振（ECR）源产生的等离子体，研究了一种高度可控的逐层刻蚀技术。在这种蚀刻技术中，样品分别暴露于反应性氯自由基和低能Ar离子，并重复。对于GaAs蚀刻，通常使用35 W微波功率产生氯自由基，使用50 W微波功率和6 W射频功率产生Ar离子，自感直流偏压为−38 V。当表面完全被活性氯自由基覆盖时，发现蚀刻速率与氯自由基或Ar离子反应时间无关。在GaAs上实现了蚀刻速率在0.5 nm/cycle范围内的逐层蚀刻。在−120 °C时没有观察到GaAs的腐蚀，腐蚀速率随温度的升高而显著增加。结果表明，在微波功率为100 W时，由于钝化作用，刻蚀速率随微波功率的增大而增大，当微波功率为100 W时，由于钝化作用，刻蚀速率随微波功率的增大而减小。
A highly controllable etching technique, in which the etching proceeds layer by layer, has been studied using a plasma generated by an electron cyclotron resonance (ECR) source. In this etching technique, the sample is exposed to reactive chlorine radicals and low energy Ar ions separately and repeatedly. For GaAs etching, the chlorine radicals were typically generated with 35 W microwave power and the Ar ions were produced using 50 W microwave power and 6 W rf power, with a self‐induced dc bias of −38 V. When there was complete coverage of the surface by reactive chlorine radicals, the etch rate was found to be independent of chlorine radical or Ar ion reaction time. Layer‐by‐layer etching with the etch rate in the range of 0.5 nm/cycle has been achieved on GaAs. No GaAs etching was observed at −120 °C and the etch rate increased significantly with temperature. The etch rate increased initially with microwave power used in the adsorption step, then decreased at microwave power ≳60 W due to passivation ef...