Growth of ferroelectric bismuth lanthanum nickel titanate thin films by rf magnetron sputtering
Growth of ferroelectric bismuth lanthanum nickel titanate thin films by rf magnetron sputtering
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射频磁控溅射生长铁电钛酸铋镧镍薄膜
DOI：
10.1063/1.2713352
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发表时间：
2007
影响因子：
3.2
通讯作者：
K. Honda
中科院分区：
文献类型：
--
作者：
M. Kobune;K. Fukushima;T. Yamaji;H. Tada;T. Yazawa;H. Fujisawa;M. Shimizu;Y. Nishihata;D. Matsumura;J. Mizuki;Hideshi Yamaguchi;Y. Kotaka;K. Honda
采用x射线衍射、透射电镜和极化电场磁滞回线测量等方法研究了射频磁控溅射沉积在Pt(100)∕MgO（100）衬底上的钛酸铋镧镍（Bi1−xLax） （Ni0.5Ti0.5）O3 （BLNT）薄膜的外延生长、结构性能和铁电性能。在x大于或等于0.3时出现具有c轴取向和单相四方钙钛矿结构的铁电BLNT（00l）相。随着La含量的增加，正方性（c∕a）从1.004显著增加到1.028。x小于0.3的制造的BLNT薄膜表明，基于ϕ扫描测量，MgO（202）衬底、底部Pt（202）电极和BLNT（101）铁电薄膜观察到明显的四重旋转对称性。这些结果表明，目前的la取代的BLNT薄膜在x大于或等于0.3时是异质外延生长的。证实了BLNT薄膜中的Bi在钙钛矿晶体的a位处于三价态。
The epitaxial growth, structural properties, and ferroelectric properties of bismuth lanthanum nickel titanate (Bi1−xLax) (Ni0.5Ti0.5)O3 (BLNT) thin films deposited on Pt(100)∕MgO(100) substrates by rf magnetron sputtering have been investigated using x-ray diffraction, transmission electron microscope, and polarization–electric field hysteresis loop measurements. The ferroelectric BLNT(00l) phase with c-axis orientation and a single-phase tetragonal perovskite structure appeared at x⩾0.3. The tetragonality (c∕a) increased significantly from 1.004 to 1.028 with increasing La content. The fabricated BLNT films of x⩾0.3 indicated the apparent fourfold rotational symmetry observed for a MgO(202) substrate, a bottom Pt(202) electrode, and a BLNT(101) ferroelectric film, based on ϕ scan measurements. These results imply that the present La-substituted BLNT films are grown heteroepitaxially at x⩾0.3. It was confirmed that Bi in the BLNT films is in a trivalent state at A sites in the perovskite crystal, based o...
影响因子：
4
作者：
Kobayashi, T;Noguchi, Y;Miyayama, M
通讯作者：
Miyayama, M