Diamond-like carbon-gate pH-ISFET
Diamond-like carbon-gate pH-ISFET
复制标题
类金刚石碳门 pH-ISFET
DOI：
10.1016/s0925-4005(97)00236-0
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发表时间：
1997
影响因子：
8.4
通讯作者：
R. Ferretti
中科院分区：
文献类型：
--
作者：
H. Voigt;F. Schitthelm;T. Lange;T. Kullick;R. Ferretti
介绍了一种新型的耐化学腐蚀的离子选择性场效应晶体管（ISFET）阵列，它采用非晶类金刚石（DLC）薄膜作为钝化层和pH敏感层。开发了一种DLC涂层技术，可用于在ISFET器件的有源和无源表面上沉积和图案化最终薄膜。DLC膜是由低温双射频甲烷-氦气混合气体等离子体产生的。类金刚石薄膜在腐蚀性水溶液中表现出完全的化学惰性。除了化学惰性行为之外，高薄膜硬度还使DLC薄膜比其他材料（即Si 3 N4、SiO2等）更适合作为传感器器件的钝化层。电化学和电子学特性的结果表明，DLC薄膜ISFET器件适合于传感器应用。本工作对单芯片传感器上DLC涂层ISFET与Ta 2 O 5涂层ISFET进行了比较表征。DLC ISFET的pH响应显示出比Ta2O5涂覆的ISFET更低的漂移。DLC涂层ISFET没有氧化还原交叉敏感性。传感器响应的偏移仅略微取决于温度。
A novel chemical-resistant ion-selective field-effect transistor (ISFET) array is introduced, using amorphous diamond-like carbon (DLC) films for passivation and as pH-sensitive layer. A DLC coating technology is developed, useful for depositing and patterning final thin films on active and passive surfaces of ISFET devices. The DLC films are produced by a low-temperature dual rf methane–helium gas mixture plasma. DLC thin films show complete chemical inert behaviour in aggressive aqueous electrolytes. The high film hardness in addition to the chemically inert behaviour makes DLC films more suitable as passivation layers for sensor devices than other materials (i.e. Si3N4, SiO2, etc.). It is shown from the results of electrochemical and electronic characterization of ISFET devices with DLC thin films that DLC is suitable for sensor applications. A comparative characterization of DLC-coated ISFET with a Ta2O5-coated ISFET on a single chip sensor is shown in this work. The pH response of the DLC ISFET shows lower drift than that of the Ta2O5-coated ISFET. No redox cross-sensitivity was found for DLC-coated ISFET. The shift of the sensor response is only slightly dependant on temperature.