Revealing the doping effect of encapsulated lead halogenides on single-walled carbon nanotubes

Revealing the doping effect of encapsulated lead halogenides on single-walled carbon nanotubes
复制标题

DOI:
10.1007/s00339-019-2626-5
复制
发表时间:
2019-05-01
影响因子:
2.7
通讯作者:
Eder, Dominik
Eder, Dominik
中科院分区:
材料科学4区
文献类型:
--
作者:
Kharlamova, Marianna, V;Kramberger, Christian;Eder, Dominik

文献摘要

被引文献

相似文献

我们研究了单壁碳纳米管(SWCNTs)填充氯化铅、溴化铅(PbBr2)和碘化铅(PbI2)的电子性质。高分辨扫描电子显微镜直接证实了单壁碳纳米管的填充和一维纳米晶的形成。用X-射线光电子能谱(XPS)对包覆纳米晶的化学成分进行了表征。用拉曼光谱和XPS对填充后的单壁碳纳米管的电子性质进行了表征。这三种卤化铅都导致了单壁碳纳米管的p掺杂,并且由于电荷向盐的转移,导致了单壁碳纳米管的费米能级的下移。金属纳米管的这种效应比半导体纳米管更强。掺杂效率取决于卤化铅的类型。PbI_2的掺杂效应最强,PbBr2的掺杂效应最弱。
We have investigated the electronic properties of single-walled carbon nanotubes (SWCNTs) filled with lead chloride, lead bromide (PbBr2) and lead iodide (PbI2). The filling of SWCNTs and formation of encapsulated one-dimensional nanocrystals of the salts were directly confirmed by high-resolution scanning transmission electron microscopy. The chemical composition of the encapsulated nanocrystals was proven by X-ray photoelectron spectroscopy (XPS). The electronic properties of the filled SWCNTs were characterized by Raman spectroscopy and XPS. All the three lead halogenides result in p-doping of SWCNTs and, consequently, there is a downshift of the SWCNTs' Fermi level due to the charge transfer towards the salts. The effect is stronger with metallic than semiconducting nanotubes. The efficiency of doping depends on the type of lead halogenide. The doping effect is the strongest for PbI2 and the weakest for PbBr2.