Enhanced anomalous Hall effect in Fe nanocluster assembled thin films.
Enhanced anomalous Hall effect in Fe nanocluster assembled thin films.
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DOI：
10.1039/c4cp01493f
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发表时间：
2014-07
期刊：
影响因子：
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通讯作者：
Junbao Wang;W. Mi;Laisen Wang;Qinfu Zhang;D. Peng
中科院分区：
文献类型：
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作者：
Junbao Wang;W. Mi;Laisen Wang;Qinfu Zhang;D. Peng
用等离子体气体冷凝法制备了不同膜厚（ta = 160-1200 nm）的异质均匀Fe团簇组装膜，观察到了增强的反常霍尔效应。在ta = 1200 nm处的反常霍尔系数（Rs）在300 K时达到最大值2.4 × 10（-8）Ω cm G（-1），比体相Fe大近4个数量级。饱和霍耳电阻率ρ（A）xy随温度的升高先增大后减小，并伴随着由正到负的符号变化。结果表明，ρ（A）xy随纵向电阻率（ρxx）的增加而以双对数标度减小，并服从一个新的标度关系log（ρ（A）xy/ρxx）= a0 + b 0 log ρxx。
An enhanced anomalous Hall effect is observed in heterogeneous uniform Fe cluster assembled films with different film thicknesses (ta = 160-1200 nm) fabricated by a plasma-gas-condensation method. The anomalous Hall coefficient (Rs) at ta = 1200 nm reaches its maximum of 2.4 × 10(-8) Ω cm G(-1) at 300 K, which is almost four orders of magnitude larger than bulk Fe. The saturated Hall resistivity (ρ(A)xy) first increases and then decreases with the increase of temperature accompanied by a sign change from positive to negative. Analysis of the results revealed that ρ(A)xy decreases with increasing longitudinal resistivity (ρxx) on a double-logarithmic scale and obeys a new scaling relation of log(ρ(A)xy/ρxx) = a0 + b0 log ρxx.