A 128-pixel CMOS image sensor with integrated analog nonvolatile memory
A 128-pixel CMOS image sensor with integrated analog nonvolatile memory
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DOI：
10.1109/4.720395
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发表时间：
1998-10-01
影响因子：
5.4
通讯作者：
Hosticka, BJ
中科院分区：
文献类型：
--
作者：
Aslam-Siddiqi, A;Brockherde, W;Hosticka, BJ
采用1.5微米单多晶硅标准CMOS/EEPROM工艺实现了128像素的互补金属氧化物半导体(CMOS)图像传感器阵列，每个像素具有模拟非易失性存储。集成的非易失性存储器允许对每个传感器元件进行偏移校正、消除固定图案噪声以及补偿背景照明。传感器阵列还可以学习呈现的模式，并将其存储在其模拟非易失性存储器中，只需“看到”。存储的图案可以直接读出，或者与光学输入相结合，它可以用于图案识别或运动检测。模拟存储器所需的编程电路已集成在同一芯片上。
A 128-pixel complementary metal-oxide-semiconductor (CMOS) image sensor array with analog nonvolatile storage for each pixel has been realized in a 1.5-mu m single-poly standard CMOS/EEPROM technology and successfully tested. The integrated nonvolatile memory allows an offset correction for each sensor element, cancellation of the fixed pattern noise, and compensation of the background illumination. The sensor array can also learn a presented pattern and store it in its analog nonvolatile memory just by "seeing." The stored pattern can be read out directly or, in combination with the optical input, it can be used for pattern recognition or motion detection. The required programming circuitry for the analog memory has been integrated on the same chip.