Epitaxial growth of GaN on copper substrates
Epitaxial growth of GaN on copper substrates
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DOI：
10.1063/1.2213178
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发表时间：
2006-06-26
影响因子：
4
通讯作者：
Fujioka, H.
中科院分区：
文献类型：
--
作者：
Inoue, S.;Okamoto, K.;Fujioka, H.
我们用脉冲激光沉积技术在铜(111)衬底上生长了GaN薄膜。我们发现，当采用低温生长的AlN缓冲层时，GaN(0001)在Cu(111)衬底上外延生长，平面外延关系为AlN[11(2)over bar0]平行于Cu[1(2)over bar0]反射高能电子衍射图显示出尖锐的条纹，表明GaN具有平坦的表面生长。电子背散射衍射观察表明，GaN薄膜中既不存在30度旋转区，也不存在立方相区。椭圆偏振光谱测量表明，GaN/AlN/Cu结构中的异质界面是突变的。由于铜的高热导率，在铜衬底上外延生长GaN可能会提高未来发光和电子器件的功率极限。
We have grown GaN films on Cu(111) substrates using pulsed laser deposition. We have found that GaN(0001) grows epitaxially on Cu(111) when employing low temperature grown AlN buffer layers with an in-plane epitaxial relationship of AlN[11 (2) over bar0]parallel to Cu[1 (2) over bar0] Reflection high-energy electron diffraction images have exhibited sharp streaky patterns, indicating that GaN grows with a flat surface. Electron backscattering diffraction observations have revealed that neither 30 degrees rotational domains nor cubic phase domains exist in the GaN films. Spectroscopic ellipsometry measurements have shown that the heterointerfaces in the GaN/AlN/Cu structure are abrupt. The epitaxial growth of GaN on Cu substrates is likely to raise the power limit for future light emitting and electron devices due to the high thermal conductivity of Cu.