Molecular beam epitaxy of SrTiO3 with a growth window
Molecular beam epitaxy of SrTiO3 with a growth window
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DOI：
10.1063/1.3184767
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发表时间：
2009-07-20
影响因子：
4
通讯作者：
Stemmer, Susanne
中科院分区：
文献类型：
--
作者：
Jalan, Bharat;Moetakef, Pouya;Stemmer, Susanne
在传统的分子束外延(MBE)方法中，许多只含有非挥发性组分的复合氧化物没有很宽的生长窗口，这使得获得化学计量比的薄膜变得困难。结果表明，采用混合分子束外延技术，利用挥发性金属有机源钛，四异丙氧钛(TTIP)制备的钛酸锶薄膜，可以实现化学计量比自我调节的生长窗口。随着温度的升高，生长窗口变宽，并向较高的TTIP/Sr通量比移动，表明这与挥发性TTIP的脱附有关。我们展示了化学计量比，高度完美，绝缘的钛酸锶薄膜。这种方法可以适用于其他复杂氧化物的生长，这些氧化物以前被认为没有宽的MBE生长窗口。
Many complex oxides with only nonvolatile constituents do not have a wide growth window in conventional molecular beam epitaxy (MBE) approaches, which makes it difficult to obtain stoichiometric films. Here it is shown that a growth window in which the stoichiometry is self-regulating can be achieved for SrTiO3 films by using a hybrid MBE approach that uses a volatile metal-organic source for Ti, titanium tetra isopropoxide (TTIP). The growth window widens and shifts to higher TTIP/Sr flux ratios with increasing temperature, showing that it is related to the desorption of the volatile TTIP. We demonstrate stoichiometric, highly perfect, insulating SrTiO3 films. The approach can be adapted for the growth of other complex oxides that previously were believed to have no wide MBE growth window.