Effect of Cu Doping on the Conductivity of Individual ZnTe Nanowires
Effect of Cu Doping on the Conductivity of Individual ZnTe Nanowires
复制标题
DOI：
10.4028/www.scientific.net/amm.174-177.641
复制
发表时间：
2012-05
期刊：
影响因子：
--
通讯作者：
Q. Meng;Fang Wang;Zai Ming Yang
中科院分区：
文献类型：
--
作者：
Q. Meng;Fang Wang;Zai Ming Yang
研究了Cu掺杂对ZnTe纳米线电导率的影响。在热处理过程中，Cu扩散到ZnTe纳米线中。Cu含量由溅射在ZnTe纳米线顶部的Cu层的厚度控制。用四端测量法测量了Cu掺杂ZnTe纳米线的I-V曲线。结果表明，Cu掺杂的ZnTe纳米线的电导率得到了有效的提高。当ZnTe纳米线中Cu的掺杂量达到17.5%时，与未掺杂的ZnTe纳米线相比，Cu掺杂的ZnTe纳米线的电导率提高了约5个数量级。
The effect of Cu doping on the conductivity of individual ZnTe nanowires was investigated. Cu was diffused into ZnTe nanowires during the heat treatment process. Cu content was controlled by the thickness of Cu layer sputtered on the top of ZnTe nanowires. I-V curves of Cu doped ZnTe nanowires have been tested by four-terminal measurement. The results indicate that the conductivity of Cu doped ZnTe nanowires is effectively improved. When Cu content doping in ZnTe nanowires reaches 17.5%, there is about five orders of magnitude improvement in the conductivity of Cu doped ZnTe nanowires, compared with undoped ZnTe nanowires.