On wafer de-embedding for SiGe/BiCMOS/RFCMOS transmission line interconnect characterization

On wafer de-embedding for SiGe/BiCMOS/RFCMOS transmission line interconnect characterization
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DOI：
10.1109/iitc.2004.1345728
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发表时间：
2004-06
期刊：
Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)
影响因子：
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通讯作者：
Y. Tretiakov;K. Vaed;D. Ahlgren;J. Rascoe;S. Venkatadri;Wayne H. Woods
Y. Tretiakov;K. Vaed;D. Ahlgren;J. Rascoe;S. Venkatadri;Wayne H. Woods
中科院分区：
其他
文献类型：
--
作者：
Y. Tretiakov;K. Vaed;D. Ahlgren;J. Rascoe;S. Venkatadri;Wayne H. Woods

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本文比较了不同的去嵌入技术的晶圆上传输线互连表征。主要目标是将解嵌入的S参数和提取的电气特性与行业标准电磁求解器结果进行对比和关联。首次采用简化的“直通”技术和新的“短开”方法在0.1-70 GHz频带内对片上共面波导进行去嵌入。
This paper compares different de-embedding techniques for on-wafer transmission line interconnect characterization. The main goal is to contrast and correlate de-embedded S-parameters and extracted electrical characteristics versus industry standard electromagnetic solver results. For the first time the simplified "thru" technique and new "short-open" method are employed for de-embedding on-chip coplanar waveguides over the 0.1-70 GHz frequency bandwidth.