InP-Based Type-II Quantum-Well Lasers and LEDs
InP-Based Type-II Quantum-Well Lasers and LEDs
复制标题
DOI：
10.1109/jstqe.2013.2247572
复制
发表时间：
2013-02
影响因子：
4.9
通讯作者：
S. Sprengel;C. Grasse;Peter Wiecha;A. Andrejew;T. Gruendl;G. Boehm;Ralf Meyer;Markus-Christian Amann
中科院分区：
文献类型：
--
作者：
S. Sprengel;C. Grasse;Peter Wiecha;A. Andrejew;T. Gruendl;G. Boehm;Ralf Meyer;Markus-Christian Amann
基于第二类InP的光源为中红外激光器提供了一个很有前途的概念。最近取得了巨大的进展，因为第一个电泵浦和光泵浦的激光器可以被证明超过了第一类InP基激光器的波长限制(~2.3μm)。本文介绍了它的材料系统和器件概念，并报道了它的最新成果，如脉冲模式电泵浦激光工作波长高达2.6μm，20-80℃下连续波谐振腔发光二极管工作波长高达3.3μm，光致发光高达3.9μm。
Type-II InP-based light sources provide a promising concept for mid-infrared lasers. These have recently made huge progress, as the first electrically and optically pumped lasers could be demonstrated beyond the wavelength limit for type-I InP-based lasers (~2.3 μm). In this paper, we introduce the material system and device concepts, and report the latest achievements, such as electrically pumped lasing operation up to a wavelength of 2.6 μm in pulsed mode, continuous-wave resonant-cavity light-emitting diode operation up to a wavelength of 3.3 μm at 20-80 °C and photoluminescence even up to 3.9 μm.