High‐efficiency thin‐film polycrystalline‐silicon solar cells
High‐efficiency thin‐film polycrystalline‐silicon solar cells
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高效薄膜多晶硅太阳能电池
DOI：
10.1063/1.326011
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发表时间：
1979
期刊：
影响因子：
--
通讯作者：
R. Abderrassoul
中科院分区：
文献类型：
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作者：
T. Chu;S. Chu;C. L. Lin;R. Abderrassoul
在冶金硅衬底上沉积含有p-n结的硅膜已用于制备薄膜硅太阳能电池。通过将提纯的冶金硅在石墨板上定向凝固制备衬底，并通过含适当掺杂剂的氢气热还原三氯氢硅沉积硅膜。制备了p+/n/n+-冶金硅/石墨结构的太阳能电池，9-10 cm ~ 2面积电池的AM 1效率高达9.5%
The deposition of a silicon film containing a p‐n junction on a metallurgical silicon substrate has been used for the preparation of thin‐film silicon solar cells. The substrate was prepared by the unidirectional solidification of purified metallurgical silicon on a graphite plate, and the silicon film was deposited by the thermal reduction of trichlorosilane with hydrogen containing appropriate dopants. Solar cells of the p+/n/n+‐metallurgical silicon/graphite configuration have been prepared, and the AM1 efficiencies of 9–10 cm2 area cells are up to 9.5%