Three-dimensional Dirac semimetal and quantum transport in Cd3As2

Three-dimensional Dirac semimetal and quantum transport in Cd3As2
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Cd3As2 中的三维狄拉克半金属和量子输运

DOI:
10.1103/physrevb.88.125427
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发表时间:
2013-09-23
期刊:
影响因子:
3.7
通讯作者:
Fang, Zhong
Fang, Zhong
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Wang, Zhijun;Weng, Hongming;Fang, Zhong

文献摘要

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基于第一性原理的计算,我们恢复沉默的拓扑性质的Cd3As2,一个众所周知的半导体具有高载流子迁移率。我们发现,它是一个具有单对三维(3D)狄拉克点的体积和非平凡的费米弧的表面上的一个拓扑半金属。它可以通过对称破缺被驱动到拓扑绝缘体和Weyl半金属态,或者通过降维被驱动到带隙超过100 meV的量子自旋霍尔绝缘体。我们建议,三维狄拉克锥在大部分的Cd3As2可以支持相当大的线性量子磁电阻,甚至到室温。
Based on the first-principles calculations, we recover the silent topological nature of Cd3As2, a well known semiconductor with high carrier mobility. We find that it is a symmetry-protected topological semimetal with a single pair of three-dimensional (3D) Dirac points in the bulk and nontrivial Fermi arcs on the surfaces. It can be driven into a topological insulator and a Weyl semimetal state by symmetry breaking, or into a quantum spin Hall insulator with a gap more than 100 meV by reducing dimensionality. We propose that the 3D Dirac cones in the bulk of Cd3As2 can support sizable linear quantum magnetoresistance even up to room temperature.