On the mechanism of blistering phenomenon in high temperature H-implanted GaN
On the mechanism of blistering phenomenon in high temperature H-implanted GaN
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DOI：
10.1063/1.4793659
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发表时间：
2013-02-25
影响因子：
4
通讯作者：
Singh, R.
中科院分区：
文献类型：
--
作者：
Dadwal, U.;Singh, R.
提出了高温氢离子注入引起GaN表面鼓泡的机理。在植入状态下起泡的合理原因是氢诱导损伤的增加。这是相反的正常减少H-诱导损伤的注入/退火温度的增加，所谓的反向退火效应。透射电子显微镜观察发现，损伤带的形成与大面积的微裂纹躺在沿着{0001}平面在锯齿形的方式。这些微裂纹在超压状态下表现出双重重叠，这导致了较高的损伤诱导应力，从而导致表面起泡。(C)2013年美国物理学会。[http：//dx.doi.org/10.1063/1.4793659]
The mechanism of high temperature H-implantation-induced surface blistering in GaN has been presented in this work. The plausible reason for the blistering in the as-implanted state is the increase in H-induced damage. This is contrary to the normal decrease of H-induced damage with the increase in implantation/annealing temperature, so called as the reverse annealing effect. Transmission electron microscopy revealed the formation of a damage band incorporated with large area microcracks lying along {0001} planes in zig-zag manner. These microcracks in an overpressurized state showed two fold overlapping, which resulted in higher damage-induced stress to cause the surface blistering. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793659]