Behavior of 2.8-and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities
Behavior of 2.8-and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities
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DOI：
10.1103/physrevb.59.13176
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发表时间：
1999-05-15
影响因子：
3.7
通讯作者：
Wessels, BW
中科院分区：
文献类型：
--
作者：
Reshchikov, MA;Yi, GC;Wessels, BW
在较宽的温度和激发强度范围内研究了掺杂mg的GaN的蓝色和紫外光致发光带。随着温度的升高，观察到光谱的红移。随着激发密度的增加，谱带发生蓝移。用补偿半导体的电位涨落模型解释了观测到的3.2 eV波段的位移。相比之下，2.8 eV波段的位移基本上与远端供体-受体对的发光饱和有关。2.8 eV发光带在高温下热猝灭，活化能为0.3 ~ 0.4 eV。II是由于深供体态中被困电子的热释放。[s0163 - 1829(99) 02220 - 1]。
The blue and ultraviolet photoluminescence bands in Mg-doped GaN have been investigated over a wide range of temperatures and excitation intensities. Redshifts of the bands were observed with increasing temperature. The bands underwent a blueshift with increased excitation density. The observed shifts of the 3.2 eV band are explained by a potential fluctuation model for a compensated semiconductor. In contrast, the shifts of the 2.8 eV band are essentially related to saturation of luminescence from distant donor-acceptor pairs responsible for this emission. Thermal quenching of the 2.8 eV luminescence band was observed at high temperatures with an activation energy of 0.3-0.4 eV. II is attributed to thermal release of trapped electrons from a deep donor state. [S0163-1829(99)02220-1].