Nanowires of four epitaxial hexagonal silicides grown on Si(001)
Nanowires of four epitaxial hexagonal silicides grown on Si(001)
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DOI：
10.1063/1.1428807
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发表时间：
2002-03-01
影响因子：
3.2
通讯作者：
Williams, RS
中科院分区：
文献类型：
--
作者：
Chen, Y;Ohlberg, DAA;Williams, RS
如果外延层和衬底之间的晶格失配在沿着一个晶轴方向上大而在垂直晶轴方向上沿着方向上小，则可以在Si（001）上生长外延自组装硅化物纳米线。该现象用四个例子来说明：ScSi 2、ErSi 2、DySi 2和GdSi 2，它们沿沿着其中一个Si方向分别具有-4.6%、6.3%、7.6%和8.9%的晶格失配，沿垂直Si方向分别具有沿着0.8%、-1.6%、-0.1%和0.8%的失配。所得的自组装纳米线的宽度和高度在3-11和0.2-3 nm的范围内，这取决于晶格失配。纳米线的平均长度在150-450 nm的范围内，并且主要由动力学问题确定。硅化物纳米线的外延生长应该证明那些研究准一维系统的兴趣。(C)2002年美国物理学会。
Epitaxial self-assembled silicide nanowires can be grown on Si (001) if the magnitude of the lattice mismatch between epilayer and substrate is large along one crystal axis and small along the perpendicular axis. This phenomenon is illustrated with four examples: ScSi2, ErSi2, DySi2, and GdSi2, which have lattice mismatches of -4.6%, 6.3%, 7.6%, and 8.9%, respectively, along one of the Si directions and mismatches of 0.8%, -1.6%, -0.1%, and 0.8%, respectively, along the perpendicular Si direction. The resulting self-assembled nanowires have widths and heights in the range of 3-11 and 0.2-3 nm, depending on the lattice mismatches. The average lengths of the nanowires are in the range 150-450 nm, and are determined primarily by kinetic issues. The epitaxial growth of silicide nanowires should prove interesting to those studying quasi-one- dimensional systems. (C) 2002 American Institute of Physics.