High‐efficiency infrared light emitting diodes made in liquid phase epitaxy and molecular beam epitaxy HgCdTe layers
High‐efficiency infrared light emitting diodes made in liquid phase epitaxy and molecular beam epitaxy HgCdTe layers
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采用液相外延和分子束外延 HgCdTe 层制成的高效红外发光二极管
DOI：
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发表时间：
1991
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影响因子：
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通讯作者：
J. Piaguet
中科院分区：
文献类型：
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作者：
P. Bouchut;G. Destefanis;J. Chamonal;A. Million;B. Pelliciari;J. Piaguet
在本文中，我们首次报道了在CdZnTe （CZT）晶格匹配衬底上采用液相外延（LPE）或分子束外延（MBE）生长的HgCdTe （MCT）涂层制造的发光二极管（led）的性能。二极管是由离子注入制成的n/p同质结。为了获得3 ~ 5 μm的发射波长，选择了MCT的组成。在20 ~ 300 K范围内记录了电致发光光谱。对这两种材料进行了比较，表明它们具有相似的性能。LPE和MBE材料的内部量子效率分别高达25% （77 K时λ峰=4.1 μm）和6% (300 K时λ峰=3.5 μm)，在90 K左右达到最大值。对于λ峰为5.5 μ的材料，在77 K下，内量子效率仍然高达5%。使用通过CZT衬底的背面发射和与CZT透镜的光学耦合，外部量子效率大大提高：在这种情况下，20%的…
We report in this article, for the first time the performance of light emitting diodes (LEDs) made in HgCdTe (MCT) epilayers on CdZnTe (CZT) lattice‐matched substrates grown either by liquid phase epitaxy (LPE) or molecular beam epitaxy (MBE). Diodes are n/p homojunctions made by ion implantation. The MCT composition was chosen in order to get the emission wavelength between 3 and 5 μm. Electroluminescence spectra were recorded between 20 K and 300 K. A comparison of the two materials is made, demonstrating that they exhibit similar performances. Internal quantum efficiencies as high as 25% (λ peak=4.1 μm at 77 K) and 6% (λ peak=3.5 μm at 300 K) were obtained on both LPE and MBE materials and they reach a maximum for a temperature of about 90 K. For a material with λ peak=5.5 μ at 77 K, internal quantum efficiency remains as high as 5%. The external quantum efficiency is considerably increased using backside emission through the CZT substrate and optical coupling with a CZT lens: in such conditions 20% of...