High-frequency organic rectifiers through interface engineering
High-frequency organic rectifiers through interface engineering
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DOI：
10.1557/mrc.2017.100
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发表时间：
2017-12-01
影响因子：
1.9
通讯作者：
Lee, Changhee
中科院分区：
文献类型：
--
作者：
Kang, Chan-mo;Shin, Hyeonwoo;Lee, Changhee
对高频和低成本整流器的需求促使许多研究人员对有机整流器进行研究。最近，具有增强的本征载流子迁移率和电荷注入效率的有机整流器使工作频率达到了千兆赫(GHz)。金属/有机和有机/有机界面在决定有机整流器的电学性质方面起着重要的作用。在这篇前瞻性的文章中，我们回顾了有机整流器的结构，并介绍了实现其高频性能的最新技术。我们讨论了利用界面工程改善其电学性能的方法，并展望了GHz可操作有机整流器的实际应用前景。
The demand for high-frequency (HF) and low-cost rectifiers has encouraged many researchers to investigate organic rectifiers. Recently, organic rectifiers with enhanced intrinsic carrier mobility and charge injection efficiency have enabled operating frequencies to reach up to a gigahertz (GHz). The metal/organic and organic/organic interfaces have played a significant role in determining the electrical properties of the organic rectifiers. In this prospective article, we review the structure of organic rectifiers and present the current state-of-the-art to attain their HF performance. We discuss methods for improving their electrical properties using interface engineering and present future prospects for practical use of GHz-operable organic rectifiers.