Characterization of Tensile Strained Si1-yCy Alloy Grown by Photo- and Plasma Chemical Vapor Deposition at Very Low Temperature
Characterization of Tensile Strained Si1-yCy Alloy Grown by Photo- and Plasma Chemical Vapor Deposition at Very Low Temperature
复制标题
极低温下光和等离子体化学气相沉积生长的拉伸应变 Si1-yCy 合金的表征
DOI：
10.1143/jjap.40.4440
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发表时间：
2001
影响因子：
1.5
通讯作者：
M. Konagai
中科院分区：
文献类型：
--
作者：
K. Abe;S. Yagi;T. Okabayashi;A. Yamada;M. Konagai
报道了光化学气相沉积（photocvd）和等离子体增强化学气相沉积（plasma-CVD）在Si（001）上外延生长Si1-yCy薄膜。我们在极低的衬底温度（200℃）下，用两种方法在SiH4和H2气体中加入C2H2或CH4，得到了外延Si薄膜。观察到氢在外延膜中的掺入和氢原子的晶格膨胀。在N2气氛中进行热退火，使膜中的H原子解吸。在600℃以上退火的薄膜中，在Si网络（607 cm-1）中检测到C局域振动模式。经过退火处理，Si1-yCy层的x射线衍射峰向更高的角度偏移。x射线倒易晶格空间映射表明Si1-yCy合金呈伪晶生长。由此，成功地获得了取代碳含量高达2.7%的拉伸应变Si1-yCy合金。
Epitaxial growth of Si1-yCy films on Si(001) by photochemical vapor deposition (photo-CVD) and plasma-enhanced chemical vapor deposition (plasma-CVD) is reported. We obtained the epitaxial Si films by the addition of C2H2 or CH4 to SiH4 and H2 gases using both methods at a very low substrate temperature of 200°C. Hydrogen incorporation in the epitaxial films and lattice expansion by H atoms were observed. The H atoms in the film desorbed by thermal annealing in N2 atmosphere. The C local vibration mode in the Si network (607 cm-1) was detected in the films annealed at temperatures higher than 600°C. X-ray diffraction peak of the Si1-yCy layer shifted to a higher angle by the annealing. The X-ray reciprocal lattice space mapping indicated pseudomorphic growth of Si1-yCy alloys. Thus, the tensile strained Si1-yCy alloy with a high substitutional C content of 2.7% was successfully obtained.