NONVOLATILE FULL ADDER BASED ON A SINGLE MULTIVALUED HALL JUNCTION
NONVOLATILE FULL ADDER BASED ON A SINGLE MULTIVALUED HALL JUNCTION
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DOI：
10.1142/s2010324713500082
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发表时间：
2013-06-01
期刊：
影响因子：
1.8
通讯作者：
Hesjedal, T.
中科院分区：
文献类型：
--
作者：
Zhang, S. L.;Collins-Mcintyre, L. J.;Hesjedal, T.
多值逻辑器件是实现高密度、低功耗存储和逻辑功能的很有前途的候选器件。我们提出了一种室温铁磁(FM)多层霍尔结器件，它具有四种不同的电阻状态，从而具有四种不同的逻辑状态。可以将状态编码为四进制位，并将其解码为两个二进制位。我们在实验上演示了一种基于单个霍尔结的非易失性全加器--非凡霍尔平衡(EHB)。该器件可以很容易地集成到复杂的逻辑电路中，以实现内存中逻辑架构。
Multivalued logic devices are promising candidates for achieving high-density, low-power memory and logic functionalities. We present a room-temperature ferromagnetic (FM) multilayer Hall junction device with four distinct resistance-and thus logic-states. The states can be encoded as a quaternary bit and decoded into two binary bits. We experimentally demonstrate a nonvolatile full adder that is based on a single Hall junction, the extraordinary Hall balance (EHB). The device can be easily integrated into complex logic circuits for logic-in-memory architectures.