A Ka/V Band-Switchable LNA With 2.8/3.4 dB Noise Figure
A Ka/V Band-Switchable LNA With 2.8/3.4 dB Noise Figure
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DOI：
10.1109/lmwc.2019.2939540
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发表时间：
2019-10-01
影响因子：
3
通讯作者：
Ulusoy, A. Cagri
中科院分区：
文献类型：
--
作者：
Nawaz, Asad A.;Albrecht, John D.;Ulusoy, A. Cagri
研制了一种0.13 μ m SiGe BiCMOS带通可切换低噪声放大器（LNA），工作频率为28或60 GHz。LNA在输入端采用LC谐振电路来执行双频阻抗匹配，而输出端则使用可调谐短截线从一个频带切换到另一个频带。通过使用HBT开关使短截线可调谐，这减小了短截线的长度，从而在28和60 GHz模式之间切换LNA。该开关的ON状态损耗为1.2 dB，OFF状态损耗为0.7 dB。在28/60 GHz时，小信号增益为/15 dB，噪声系数为2.8/3.4 dB，压缩点为-12/-7 dBm（P1 dB）。这款频带可切换的紧凑型LNA的芯片尺寸为0.48 x 0.48 mm（2），在2.5 V电源电压下的直流功耗为8.2/21 mW。在这些研究中，这是第一次演示28/60 GHz双频LNA，其性能与每个频段的专用LNA相当。
A 0.13 mu m SiGe BiCMOS band-switchable low noise amplifier (LNA) is developed which can be operated at 28 or 60 GHz. The LNA employs an LC tank at the input to perform dual-band impedance matching, while the output is switched from one band to the other using a tunable stub. The stub is made tunable by using an HBT switch, which reduces the stub's length when turned on shifting the LNA between 28 and 60 GHz modes. The switch has 1.2 dB ON- and 0.7 dB OFF-state losses. The measured results are /15 dB small signal gain, 2.8/3.4 dB noise figure, and -12/-7 dBm compression point (P1dB) at 28/60 GHz, respectively. The band-switchable compact LNA has a chip size of 0.48 x 0.48 mm(2) and consumes a dc power of 8.2/21 mW at 2.5 V supply voltage. Among the research studies, this is the first demonstration of a 28/60 GHz dual-band LNA with a performance comparable to dedicated LNAs in each band.