Extremely Uniform Bound Exciton States in Nitrogen δ-doped GaAs Studied by Photoluminescence Spectroscopy in External Magnetic Fields

Extremely Uniform Bound Exciton States in Nitrogen δ-doped GaAs Studied by Photoluminescence Spectroscopy in External Magnetic Fields
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外磁场下光致发光光谱研究氮 δ 掺杂 GaAs 中极其均匀的束缚激子态

DOI:
10.1063/1.3654015
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发表时间:
2011
期刊:
J. Appl. Phys.
影响因子:
--
通讯作者:
and T. Kita
and T. Kita
中科院分区:
--
文献类型:
--
作者:
Y. Harada;T. Kubo;T. Inoue;O. Kojima;and T. Kita

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