Inelastic carrier lifetime in graphene
Inelastic carrier lifetime in graphene
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DOI：
10.1103/physrevb.76.115434
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发表时间：
2007-09-01
影响因子：
3.7
通讯作者：
Das Sarma, S.
中科院分区：
文献类型：
--
作者：
Hwang, E. H.;Hu, Ben Yu-Kuang;Das Sarma, S.
我们考虑热载流子非弹性散射由于电子-电子相互作用在石墨烯作为载体的能量和密度的函数。我们利用G（0）W和随机相位近似计算了掺杂石墨烯零温准粒子自能的虚部。利用完全动态屏蔽库仑相互作用，我们得到了非弹性准粒子寿命和相应的平均自由程。石墨烯的线性色散给出了与抛物线带半导体的寿命能量依赖性在性质上不同的寿命能量依赖性。我们也得到了很好的协议，从角分辨光电子能谱实验的数据。
We consider hot-carrier inelastic scattering due to electron-electron interactions in graphene as functions of carrier energy and density. We calculate the imaginary part of the zero-temperature quasiparticle self-energy for doped graphene utilizing the G(0)W and random phases approximations. Using the full dynamically screened Coulomb interaction, we obtain the inelastic quasiparticle lifetimes and associated mean free paths. The linear dispersion of graphene gives lifetime energy dependences that are qualitatively different from those of parabolic-band semiconductors. We also get good agreement with data from angle-resolved photoemission spectroscopy experiments.