Magnetic susceptibility of YbRh2Si2 and YbIr2Si2 on the basis of a localized 4f electron approach
Magnetic susceptibility of YbRh2Si2 and YbIr2Si2 on the basis of a localized 4f electron approach
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基于局域 4f 电子方法的 YbRh2Si2 和 YbIr2Si2 磁化率
DOI：
10.1088/0953-8984/20/45/455208
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
B. Kochelaev
中科院分区：
文献类型：
--
作者：
A. Kutuzov;A. Skvortsova;S. Belov;J. Sichelschmidt;J. Wykhoff;I. Eremin;C. Krellner;C. Geibel;B. Kochelaev
我们考虑了近藤晶格化合物 YbRh2Si2 和 YbIr2Si2 中晶体电场中 Yb3+ 离子的局域性质。在此基础上，我们计算了磁化率，并考虑了最简单分子场近似中的近藤相互作用。由此产生的居里-韦斯定律和范弗莱克磁化率可以在很宽的温度范围内很好地拟合实验结果，其中热力学和输运性质显示这些材料的非费米液体行为。
We consider the local properties of the Yb3+ ion in the crystal electric field in the Kondo lattice compounds YbRh2Si2 and YbIr2Si2. On this basis we have calculated the magnetic susceptibility, taking into account the Kondo interaction in the simplest molecular field approximation. The resulting Curie–Weiss law and Van Vleck susceptibilities could be excellently fitted to experimental results over a wide temperature interval where thermodynamic and transport properties show non-Fermi-liquid behavior for these materials.