Fabrication and electric-field-dependent transport measurements of mesoscopic graphite devices
Fabrication and electric-field-dependent transport measurements of mesoscopic graphite devices
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DOI：
10.1063/1.1862334
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发表时间：
2005-02-14
影响因子：
4
通讯作者：
Kim, P
中科院分区：
文献类型：
--
作者：
Zhang, YB;Small, JP;Kim, P
我们开发了一种独特的微机械方法来提取极薄的石墨样品。石墨晶体厚度在10 ~ 100nm之间，横向尺寸与2微米相近。介观石墨器件由这些样品制成，用于电场相关电导测量。在较薄的晶体器件中观察到作为栅电压函数的强电导调制。温度相关的电阻率测量表明，在较薄的石墨样品中，边界散射的贡献更大。(C) 2005美国物理研究所。
We have developed a unique micromechanical method to extract extremely thin graphite samples. Graphite crystallites with thicknesses ranging from 10 to 100 nm and lateral size similar to2 mum are extracted from bulk. Mesoscopic graphite devices are fabricated from these samples for electric field-dependent conductance measurements. Strong conductance modulation as a function of gate voltage is observed in the thinner crystallite devices. The temperature-dependent resistivity measurements show more boundary scattering contribution in the thinner graphite samples. (C) 2005 American Institute of Physics.