VERIFICATION OF LIFSHITZ THEORY OF VANDERWAALS POTENTIAL USING LIQUID-HELIUM FILMS
VERIFICATION OF LIFSHITZ THEORY OF VANDERWAALS POTENTIAL USING LIQUID-HELIUM FILMS
复制标题
DOI：
10.1103/physreva.7.790
复制
发表时间：
1973-01-01
影响因子：
2.9
通讯作者：
ANDERSON, CH
中科院分区：
文献类型：
--
作者：
SABISKY, ES;ANDERSON, CH
用声干涉技术测量了1.38K下碱土氟化物晶体解理面上氦膜厚度的精确测量结果。这些数据与基于范德华力的Lifshitz理论的计算非常吻合。还给出了各种其他衬底上膜厚的计算结果。
Accurate measurements are presented of the thickness of helium films on cleaved surfaces of alkaline-earth fluoride crystals at 1.38 K o. The films were measured between 10 and 250 Å using an acoustic interferometry technique. The data are in excellent agreement with calculations based on the Lifshitz theory of van der Waals forces. Calculations of the film thickness on a variety of other substrates are also given.