Influence of the AlN nucleation layer on the properties of AlGaN/GaN heterostructure on Si (111) substrates
Influence of the AlN nucleation layer on the properties of AlGaN/GaN heterostructure on Si (111) substrates
复制标题
AlN成核层对Si(1→1→1)衬底上AlGaN/GaN异质结构性能的影响
DOI：
10.1016/j.apsusc.2018.04.001
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发表时间：
2018-07-31
影响因子：
6.7
通讯作者：
Ni, Jinyu
中科院分区：
文献类型：
--
作者：
Pan, Lei;Dong, Xun;Ni, Jinyu
采用金属有机物化学气相沉积（MOCVD）方法在Si（111）衬底上生长了不同AlN成核层（NL）的AlGaN/GaN异质结构。结果表明，AlN NL的生长温度对AlGaN/GaN异质结构的结构、电学和光学性质有显著的影响。将生长温度优化至1040 ℃导致AlN NL的准2D光滑表面，并提供足够的压应力以抑制随后的GaN层在冷却过程中的开裂，从而导致GaN层的结晶质量改善和AlGaN/GaN异质结构的上级二维电子气（2DEG）性能优异。(C)2018 Elsevier B. V.版权所有。
AlGaN/GaN heterostructures were grown on Si (1 1 1) substrates with different AlN nucleation layers (NL) by metal-organic chemical vapor deposition (MOCVD). The results indicate that the growth temperature of AlN NL has a noticeable influence on the structural, electronic and optical properties of the AlGaN/GaN heterostructures. Optimizing the growth temperature to 1040 C-circle led to quasi-2D smooth surface of the AlN NL with providing sufficient compressive stress to suppress cracking of the subsequent GaN layer during the cooling process, resulting in improved crystalline quality of GaN layer and superior two-dimensional electron gas (2DEG) performance of the AlGaN/GaN heterostructure. (C) 2018 Elsevier B.V. All rights reserved.