Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer
Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer
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4H-SiC的快速外延生长及缺陷转移分析
DOI：
10.4028/www.scientific.net/msf.615-617.67
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
M. Nagano
中科院分区：
文献类型：
--
作者：
H. Tsuchida;Masahiko Ito;I. Kamata;M. Nagano
研究了高生长速率下4 H-SiC外延生长中扩展缺陷的转移和产生。虽然偶尔会观察到3C多型夹杂物的形成，但使用4º偏离Si面衬底获得了几乎没有基面位错（BPD）的外延层。用X射线形貌术和透射电镜研究了外延生长过程中BPD和螺型位错（TSDs）的行为，讨论了BPD在外延层中的传播和TSDs的转化与产生。
The transfer and generation of extended defects in 4H-SiC epitaxial growth at a high growth rate are examined. An epilayer with virtually no basal plane dislocations (BPDs) is obtained using 4º off Si-face substrates, although the formation of 3C-polytype inclusions is occasionally observed. The behavior of BPDs and threading screw dislocations (TSDs) in epitaxial growth is also investigated by X-ray topography and transmission electron microscopy, and the propagation of BPDs and conversion and generation of TSDs in the epilayers are discussed.