Development and power device reliability assessment of resonant pulsed power converters for RF applications
Development and power device reliability assessment of resonant pulsed power converters for RF applications
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用于射频应用的谐振脉冲功率转换器的开发和功率器件可靠性评估
DOI：
10.1049/cp.2009.0009
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
Carastro F
中科院分区：
文献类型：
--
作者：
Carastro F
本文考虑了大功率谐振变换器的损耗量热测量和半导体热循环监测。对于测试，单相谐振转换器额定为1 kV，250 A（250 kW峰值功率，占空比10%，25 kW平均功率，脉冲长度1 ms）已开发。这表示当配备有合适的输出Transformer时，设计用于RF管的长脉冲调制（通常为1 ms-2 ms）的多相谐振电源的一个相。通过高频电源的直接调制获得脉冲操作。本文报告的工作的主要目的是在脉冲期间通过量热法和使用高速热成像的器件温度来监测IGBT模块的半导体损耗，以确定所提出的调制器技术的局限性和可靠性。本文提供了一个概述的技术和设计的原型试验台研究。实验结果表明，通过量热法和高品质的芯片热图像获得的半导体损耗，以验证所提出的方法的有效性。
This paper considers the calorimetric measurements of losses and the semiconductor thermal cycling monitoring of high power resonant converters. For the tests a single phase resonant converter rated at 1 kV, 250 A (250 kW peak power, duty ratio 10%, 25 kW average power, pulse length 1 ms) has been developed. This represents one phase of a multi-phase resonant power supply designed for long-pulse modulation (typically 1 ms-2 ms) of RF tubes when equipped with a suitable output transformer. Pulsed operation is obtained by direct modulation of the high frequency power supply. The main aim of the work reported here is to monitor semiconductor losses of the IGBT modules through calorimetry and the device temperature using high speed thermal imaging, during the pulse, to identify the limitations and reliability of the modulator technology proposed. The paper provides an overview of the technology and design of the prototype test rig studied. Experimental results, showing semiconductor losses obtained through calorimetry and high quality chip thermal images are provided to validate the effectiveness of the proposed approaches.