First principles study of SiC/SiO2 interfaces towards future power devices
First principles study of SiC/SiO2 interfaces towards future power devices
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面向未来功率器件的 SiC/SiO2 接口的第一原理研究
DOI：
10.1109/iedm.2014.7047095
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
H. Watanabe
中科院分区：
文献类型：
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作者：
K. Shiraishi;K. Chokawa;H. Shirakawa;K. Endo;M. Araidai;K. Kamiya;H. Watanabe
我们通过第一性原理计算阐明了SiC/SiO₂界面的内在问题。SiC导带底独特的近自由电子特性导致工艺诱导的应变在导带底附近意外地形成界面态。这些结果表明，无应变工艺对于制造高质量的NMOSFET是必要的。另一个建议是开发PMOSFET来替代目前流行的NMOSFET。此外，我们还讨论了由质子扩散引起的阈值电压不稳定性。
We clarify the intrinsic problems of SiC/SiO2 interfaces by the first principles calculations. The unique nearly free electron like characteristics of SiC conduction band bottom causes unexpected formation of interface states near the conduction band bottoms by process induced strain. These results indicate that strain free process is necessary for fabricating high quality NMOSFET. Another proposal is developing PMOSFET instead of presently popular NMOSFET. Moreover, we also discuss the Vth instability caused by proton diffusion.