Insights into interface and bulk defects in a high efficiency kesterite-based device
Insights into interface and bulk defects in a high efficiency kesterite-based device
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DOI：
10.1039/d0ee02004d
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发表时间：
2021-01-01
影响因子：
32.5
通讯作者：
Perez-Rodriguez, Alejandro
中科院分区：
文献类型：
--
作者：
Fonoll-Rubio, Robert;Andrade-Arvizu, Jacob;Perez-Rodriguez, Alejandro
这项工作提供了一个高效率的Cu2ZnSnSe4设备使用先进的电子显微镜和光谱技术相结合的详细分析。特别是，通过高分辨率电子显微镜技术与拉曼，X射线荧光和俄歇光谱测量在宏观，微观和纳米尺度的组合，实现了在设备的界面处和在吸收体中存在的不同缺陷的全貌。通过同时调查本体和界面，可以评估器械每个部件中发现的缺陷对其性能的影响。尽管良好的结晶质量和均匀的组合物中的散装，这项工作的报告，第一次，直接证据的孪晶缺陷的散装，在背面界面的微米和纳米的空隙和晶粒间的不均匀性和位错缺陷的前界面。这些，连同观察到的其他问题，如强吸收体厚度变化和双层结构与小晶粒在底部，被证明是限制CZTSe设备的性能的主要因素。这些结果开辟了新的解决方案，以进一步发展锌黄锡矿技术，并推动其向更高的性能识别的方式。此外，这项研究提供了一个例子，如何先进的表征紧急多层为基础的设备可以用来阐明他们的主要局限性。
This work provides a detailed analysis of a high efficiency Cu2ZnSnSe4 device using a combination of advanced electron microscopy and spectroscopy techniques. In particular, a full picture of the different defects present at the interfaces of the device and in the bulk of the absorber is achieved through the combination of high resolution electron microscopy techniques with Raman, X-ray fluorescence and Auger spectroscopy measurements at the macro, micro and nano scales. The simultaneous investigation of the bulk and the interfaces allows assessing the impact of the defects found in each part of the device on its performance. Despite a good crystalline quality and homogeneous composition in the bulk, this work reports, for the first time, direct evidence of twinning defects in the bulk, of micro and nano-voids at the back interface and of grain-to-grain non-uniformities and dislocation defects at the front interface. These, together with other issues observed such as strong absorber thickness variations and a bilayer structure with small grains at the bottom, are shown to be the main factors limiting the performance of CZTSe devices. These results open the way to the identification of new solutions to further developing the kesterite technology and pushing it towards higher performances. Moreover, this study provides an example of how the advanced characterization of emergent multilayer-based devices can be employed to elucidate their main limitations.