Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire
Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire
复制标题
成核层生长过程中三甲基镓流动对蓝宝石上生长的 GaN 性能的影响
DOI：
10.1143/jjap.35.l285
复制
发表时间：
1996
影响因子：
1.5
通讯作者：
S. P. D. Steven P. Denbaars
中科院分区：
文献类型：
--
作者：
S. Keller;D. Kapolnek;B. Keller;YiFeng Wu;B. Heying;J. Speck;Umesh K. Mishra Umesh K. Mishra;S. P. D. Steven P. Denbaars
本文报道了常压金属有机化学气相沉积法在基面蓝宝石上生长的外延GaN薄膜的电学、光学和结构特性在成核层生长过程中三甲基镓流动的影响。当三甲基镓的最佳流量为45µmol/min时，在成核层上生长的1.2µm厚GaN薄膜的室温迁移率为644 cm2/s， x射线衍射峰的最小宽度为（002）和（102）。随着三甲基镓流量的增加，长大成核层的粗糙度降低。然而，在加热到GaN体生长温度后，光滑的、生长的成核层表现出强烈的岛状粗化趋势，表面粗糙度增加。
We report on the effect of the trimethylgallium flow during nucleation layer growth on the electrical, optical and structural properties of epitaxial GaN films grown on basal plane sapphire by atmospheric pressure metalorganic chemical vapor deposition. The 1.2 µm thick GaN films grown on nucleation layers with the optimum trimethylgallium flow of 45 µmol/min had a room temperature mobility of 644 cm2/s and minimum width of the (002) and the (102) X-ray diffraction peaks. The roughness of the as-grown nucleation layers decreased with increased trimethylgallium flow. However, smooth, as-grown, nucleation layers showed a strong tendency for island coarsening and an increased surface roughness after heating to the bulk GaN growth temperature.