A Novel Low V-F Super Barrier Rectifier With an N-Enhancement Layer
A Novel Low V-F Super Barrier Rectifier With an N-Enhancement Layer
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一种带有N增强层的新型低V-F超级势垒整流器
DOI：
10.1109/led.2016.2647603
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发表时间：
2017
影响因子：
4.9
通讯作者：
Zhang Bo
中科院分区：
文献类型：
--
作者：
Chen Wensuo;Zhang Peijian;Zhong Yi;Tan Kaizhou;Liao Ruijin;Zeng Zheng;Zhang Bo
在这封信中，一种新的超级势垒整流器与N-增强层（NEL-SBR）的建议和实验证明。与平面VDMOS的反JFET注入技术类似，但又不同，NEL设计使这种新型整流器具有增强的正向导通能力。实验结果表明，所提出的NEL-SBR具有较低的正向压降和较大的品质因数方面比那些没有NEL的SBR的性能有所改善。对于新的NEL-SBR，只有一个毯式浅离子注入步骤被添加到没有NEL的SBR的制造过程中。所制造的具有和不具有NEL的SBR的击穿电压都大于50 V。通过去除N+接触，获得了制造工艺复杂性的降低，并且对于所提出的新SBR，来自先前提出的器件的寄生N+/P/N结构的潜在可靠性问题将不会出现。因此，所提出的装置是有前途的整流器，可用于电力电子应用。
In this letter, a novel super barrier rectifier with an N-enhancement layer (NEL-SBR) is proposed and experimentally demonstrated. Similar to, yet different from, the anti-JFET implantation technology for planar VDMOS, the NEL design equips this new rectifier with enhanced forward conduction ability. As the experimental results show, the proposed NEL-SBR had an improved performance with regard to a lower forward voltage drop and a larger figure of merit than those of the SBR without NEL. For the new NEL-SBR, only one blanket shallow ion implantation step was added to the manufacturing process of the SBR without NEL. The breakdown voltages of the fabricated SBRs with and without NEL were all greater than 50 V. By removing N+contact, a reduction in the manufacturing process complexity is obtained, and the potential reliability issues from the parasitic N+/P/N structure for the devices presented earlier will not arise for the proposed new SBRs. Therefore, the proposed devices are promising rectifiers that can be used in power electronic applications.