Fine structure of the exciton states in InAs quantum dots
Fine structure of the exciton states in InAs quantum dots
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InAs量子点中激子态的精细结构
DOI：
10.1134/s0021364013050056
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发表时间：
2013
期刊：
影响因子：
1.3
通讯作者：
A. L. Aseev
中科院分区：
文献类型：
--
作者：
A. Gaisler;A. S. Yaroshevich;I. A. Derebezov;A. K. Kalagin;A. Bakarov;A. Toropov;D. Shcheglov;V. Gaǐsler;A. Latyshev;A. L. Aseev
用低温下的显微光致发光方法研究了短间断生长InAs量子点中激子态的精细结构。结果表明，随着量子点尺寸的增大，激子态的分裂逐渐增大到∼~2μeV。结果表明，在1.3-1.4 eV的激子能量范围内，这种分裂的大小与激子谱线的自然宽度相当。这一结果对发展基于InAs量子点的纠缠光子对发射体具有重要意义。
The fine structure of the exciton states in InAs quantum dots grown by the Stranski-Krastanov method with short growth interruptions has been studied by microphotoluminescence at cryogenic temperatures. It has been demonstrated that, with increasing quantum-dot size, the splitting of the exciton states increases steadily to ∼102 μeV. It has been shown that, in the exciton energy range of 1.3–1.4 eV, the magnitude of this splitting is comparable to the natural width of the exciton lines. This result is important for the development of entangled photon pair emitters based on InAs quantum dots.
影响因子：
3.3
作者：
Heindel, Tobias;Kessler, Christian A.;Forchel, Alfred
通讯作者：
Forchel, Alfred