Observation of a thermally enhanced magnetoresistance in NiFe
Observation of a thermally enhanced magnetoresistance in NiFe
复制标题
NiFe 中热增强磁阻的观察
DOI：
10.1063/1.4948310
复制
发表时间：
2016
期刊：
影响因子：
1.6
通讯作者：
Yu G. H.
中科院分区：
文献类型：
--
作者：
Cao Y.;Feng C.;Liu D. X.;Wang L. J.;Yang G.;Zhang J. Y.;Zhao B.;Jiang S. L.;Liu Q. Q.;Yang K.;Zelalem A. B.;Yu G. H.
设计了一种热增强磁电阻（ThMR），并通过同时施加电荷和热流到NiFe薄膜获得。测量结果表明，当输入电流为0.966 μA，温度梯度为2.5 °C/mm时，薄膜的磁电阻值高达-22600%。该ThMR可以通过调节输入电荷和热电流的相对值来控制。当温度梯度固定在2.5 °C/mm，输入电流从0.85 μA增加到1.05 μA时，ThMR先从9%增加到183%，然后从-259%下降到-13%，间隔约为0.96 μA。这可以通过自旋相关的传输现象来解释，即，散射引起的NiFe磁电阻和磁热电势的符号差。
A thermally enhanced magnetoresistance (ThMR) was designed and obtained by simultaneously applying charge and heat currents to a NiFe thin film. From the measurement we observed that the magnetoresistance value was as high as -22600% when the input charge current and applied temperature gradient was 0.966 μA and 2.5 °C/mm, respectively. This ThMR can be controllable by adjusting the relative values of the input charge and heat currents. On increasing the input charge current from 0.85 to 1.05 μA by fixing the temperature gradient at 2.5 °C/mm, the ThMR first increased from 9% to 183% and then decreased from -259% to -13%, at intervals of ∼0.96 μA. This can be explained by the spin-dependent transport phenomenon i.e., scattering induced sign difference between magnetoresistance and magnetothermopower in NiFe.