Scanning birefringence mapping of semi-insulating GaAs wafers
Scanning birefringence mapping of semi-insulating GaAs wafers
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半绝缘 GaAs 晶圆的扫描双折射测绘
DOI：
10.1109/sim.1992.752701
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发表时间：
1992
期刊：
影响因子：
--
通讯作者：
C. Miner
中科院分区：
文献类型：
--
作者：
R. Clayton;I.C. Bassignana;D.A. Macquistan;C. Miner
3”半绝缘GaAs晶圆1 cm/sup / 2/部分的微米尺度双折射映射显示特征尺寸在50到500 /spl mu/m之间波动，幅度可达1/5波长。结果比较了那些更熟悉的表征工具，扫描光致发光测绘和x射线地形。扫描双折射映射解决了一些与其他技术相同的特征，例如通过晶圆片应变自由低角度晶界，同时包含与晶圆片应变相关的独特信息。提出了观测到的相关的模型，并讨论了衬底电光探测的意义。
Micron scale birefringence mapping of 1 cm/sup 2/ portions of 3" semi-insulating GaAs wafers shows fluctuations over characteristic dimensions between 50 and 500 /spl mu/m, with magnitudes as large as 1/5 wavelength. The results are compared to those of more familiar characterisation tools, scanning photolurninescence mapping and x-ray topography. Scanning birefringence mapping resolves some of the same features as the other techniques, for example through wafer strain free low angle grain boundaries, while containing unique information related to the strain in the wafer. A model for the observed correlation is presented, and implications for substrate electro-optic probing are discussed.