Ohmic contact formation mechanism of Ni on n-type 4H-SiC
Ohmic contact formation mechanism of Ni on n-type 4H-SiC
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DOI：
10.1063/1.1404998
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发表时间：
2001-09-17
影响因子：
4
通讯作者：
Lee, JL
中科院分区：
文献类型：
--
作者：
Han, SY;Kim, KH;Lee, JL
通过比较Ni在n型4 H-SiC上的电学性能和微观结构的变化，提出了Ni在n型4 H-SiC上形成欧姆接触的机理。在高于900 ℃的温度下观察到欧姆行为，但是在600 ℃退火后形成Ni 2Si相，如以前报道的那样，Ni 2Si相负责欧姆接触。Ni_2Si的功函数高于Ni，在950 ℃退火后在Ni硅化物表面观察到石墨相，这表明在接触附近产生了大量的碳空位，通过降低电子传输的有效肖特基势垒高度，在形成欧姆接触中起着关键作用。(C)2001年美国物理学会。
Ohmic contact formation mechanism of Ni on n-type 4H-SiC is proposed by comparing the electrical properties with microstructural change. The ohmic behavior was observed at temperatures higher than 900 degreesC, but Ni2Si phase, as formerly reported to be responsible for ohmic contact, was formed after annealing at 600 degreesC. The higher work function of Ni2Si than Ni and the observation of graphite phase on the surface of Ni silicide after annealing at 950 degreesC support that a number of carbon vacancies were produced be-low the contact, playing a key role in forming an ohmic contact through the reduction of effective Schottky barrier height for the transport of electrons. (C) 2001 American Institute of Physics.