Impurity effects in ZnO and nitrogen-doped ZnO thin films fabricated by MOCVD
Impurity effects in ZnO and nitrogen-doped ZnO thin films fabricated by MOCVD
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DOI：
10.1016/j.jcrysgro.2005.10.050
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发表时间：
2006-01
影响因子：
1.8
通讯作者：
Xiaonan Li;S. Asher;S. Limpijumnong;B. Keyes;C. Perkins;T. Barnes;H. Moutinho;J. Luther;Shengbai Zhang;S. Wei;T. Coutts
中科院分区：
文献类型：
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作者：
Xiaonan Li;S. Asher;S. Limpijumnong;B. Keyes;C. Perkins;T. Barnes;H. Moutinho;J. Luther;Shengbai Zhang;S. Wei;T. Coutts
